Title :
Investigation of dopant dependent wave velocity in GaN thin film SAW filter
Author :
Jeong, Hwan-Hee ; Kim, Sun-Ki ; Lee, Jae-Sung ; Choi, Hyun-Chul ; Lee, Jung-Hee ; Lee, Yong-Hyun
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Taegu, South Korea
Abstract :
Undoped, Zn-doped, Mg-doped GaN thin film were prepared on sapphire substrate by MOCVD. SAW velocity was measured with the center frequency by HP8753C. Mg-doped GaN has the highest SAW velocity of 5617 m/s at kh=0.157 and undoped GaN has the lowest SAW velocity of 5400 m/s at kh=0.188. TCF is -60.8 ppm/°C for undoped GaN, -46.8 ppm/°C for Zn-doped GaN and -18.3 ppm/°C for Mg-doped GaN, respectively
Keywords :
III-V semiconductors; MOCVD coatings; acoustic wave velocity; gallium compounds; magnesium; semiconductor thin films; surface acoustic wave filters; wide band gap semiconductors; zinc; GaN; GaN:Mg; GaN:Zn; MOCVD; SAW velocity; dopant dependent wave velocity; sapphire substrate; thin film SAW filter; Acoustic materials; Buffer layers; Electrodes; Gallium nitride; SAW filters; Sputtering; Substrates; Surface acoustic waves; Transistors; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
DOI :
10.1109/ULTSYM.2001.991610
