DocumentCode :
378589
Title :
Propagation characteristics of the SH-SAW on (110)ZnO/(012)LiTaO 3
Author :
Shoji, Tatsuya ; Nakamura, Kiyoshi ; Yamazaki, Daisuke
Author_Institution :
Dept. of Electr. & Commun. Eng., Tohoku Univ., Sendai, Japan
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
215
Abstract :
Single-crystal ZnO films with the c-axis lying in the film plane can be grown on the (012) plane of LiTaO3 by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). The ZnO/LiTaO3 structures offer a high electromechanical coupling factor K2 of the shear horizontal-type surface acoustic wave (SH-type SAW) propagating along the X-axis due to an additional contribution of the piezoelectric shear effect of ZnO. In this paper, the propagation characteristics of the SH-SAW propagating along the X-axis in ZnO/rotated Y-cut LiTaO3 structures are theoretically analyzed considering the polarity relationship between the film and the substrate. Experimental results on the phase velocity and the coupling factor of the SH-SAW are presented and compared with the theoretical ones. The values of K2 for the case of the ZnO film grown on the positive surface of the substrate are different from those for the case of the film grown on the negative surface. The value of K2 for ZnO/42°-rotated Y-cut LiTaO3 is about 1.5 times larger than that for the case with no film
Keywords :
II-VI semiconductors; acoustic wave propagation; lithium compounds; molecular beam epitaxial growth; piezoelectric materials; semiconductor epitaxial layers; semiconductor growth; surface acoustic waves; zinc compounds; (110)ZnO/(012)LiTaO3; ECR-assisted MBE; SH-SAW; ZnO-LiTaO3; high electromechanical coupling factor; piezoelectric shear effect; shear horizontal-type surface acoustic wave; Acoustic propagation; Acoustic waves; Cyclotrons; Electron beams; Molecular beam epitaxial growth; Piezoelectric films; Resonance; Substrates; Surface acoustic waves; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
Type :
conf
DOI :
10.1109/ULTSYM.2001.991612
Filename :
991612
Link To Document :
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