Title :
MgxZn1-xO: a new piezoelectric material
Author :
Emanetoglu, N.W. ; Muthukumar, S. ; Wu, P. ; Wittstruck, R. ; Lu, Y.
Author_Institution :
Sch. of Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
Piezoelectric ZnO thin films have been successfully used for multi-layer surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. Piezoelectric magnesium zinc oxide (MgxZn1-x O) films, which are formed by alloying ZnO and MgO, allow for flexibility in thin film SAW and BAW device design. The piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. In this study, ZnO and MgxZn1-xO (x⩽0.35) thin films are grown on R-plane sapphire substrates. Their SAW properties, including velocity dispersion and piezoelectric coupling, are characterized using test devices. Data for both Rayleigh and Love wave modes, propagating parallel and perpendicular to the c-axis, are presented. In piezoelectric MgxZn1-xO films, the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg content
Keywords :
Love waves; MOCVD coatings; Rayleigh waves; acoustic wave velocity; magnesium compounds; piezoceramics; piezoelectric thin films; surface acoustic waves; Al2O3; BAW device design; Love wave mode; Mg content; MgxZn1-xO film; MgxZn1-xO/ZnO multilayer structures; MgZnO; Rayleigh wave mode; ZnO; ZnO-MgO alloying; piezoelectric coupling; piezoelectric material; piezoelectric properties; thin film SAW device design; velocity dispersion; Acoustic waves; Alloying; Bulk acoustic wave devices; Magnesium; Piezoelectric devices; Piezoelectric films; Surface acoustic wave devices; Surface acoustic waves; Thin film devices; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
DOI :
10.1109/ULTSYM.2001.991620
