Title :
Investigation of characteristics of SAW filter using undoped GaN epitaxial layer grown by MOCVD on sapphire substrate
Author :
Kim, Sun-Ki ; Park, Min-Jung ; Jang, Cheol-Yeong ; Lee, Jae-Hoon ; Choi, Hyun-Chul ; Lee, Jung-Hee ; Lee, Yong-Hyun
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Taegu, South Korea
Abstract :
Characteristics of a SAW filter using GaN thin film such as SAW velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD and its characteristics were measured experimentally with changing the kh value from 0.18 to 1.25. Phase velocity was estimated as 5546 m/s, electro-mechanical coupling coefficient k2 was ranged from 4.738% to 0.1864%, and TCF was -61.82 ppm/°C. Propagation loss, estimated by measuring insertion loss, was ranged from 3.21×10-3 dB/λ to 9.10×10-3 dB/λ with changing kh value
Keywords :
III-V semiconductors; MOCVD coatings; gallium compounds; piezoelectric semiconductors; semiconductor epitaxial layers; surface acoustic wave filters; wide band gap semiconductors; Al2O3; Al2O3-GaN; GaN; MOCVD; SAW filter; SAW velocity; TCF; electro-mechanical coupling coefficient; insertion loss; phase velocity; propagation loss; sapphire substrate; temperature coefficient of frequency; undoped GaN epitaxial layer; Frequency; Gallium nitride; MOCVD; Propagation losses; SAW filters; Sputtering; Substrates; Surface acoustic waves; Temperature; Transistors;
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
DOI :
10.1109/ULTSYM.2001.991621
