DocumentCode :
3787170
Title :
Correction to "Characterization of Recombination Centers in Si Epilayers After Helium Implantation by Direct Measurement of Local Lifetime Distribution with the AC Lifetime Profiling Technique"
Volume :
26
Issue :
1
fYear :
2005
Firstpage :
38
Lastpage :
38
Keywords :
"Helium","Rectifiers","Electron devices"
Journal_Title :
IEEE Electron Device Letters
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2004.840718
Filename :
1372689
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3787170
