Title :
Electric field probing by picosecond laser pulses
Author :
A. Krotkus;V. Pasiskevicius
Author_Institution :
Semicond. Phys. Inst., Vilnius, Lithuania
fDate :
6/4/1992 12:00:00 AM
Abstract :
A novel optoelectronic technique for electric field probing in semiconductor devices is described. It is based on monitoring of the transient displacement current produced in an external circuit by picosecond laser pulse excitation. The absolute electric field profile in an InP:Fe n-i-n structure is measured.
Keywords :
"Electric field measurement","Laser measurement applications","Optoelectronic devices","Semiconductor device testing"
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920716
