Title :
290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode
Author :
J. Nishizawa;P. Plotka;H. Makabe;T. Kurabayashi
Author_Institution :
Semicond. Res. Inst., Sendai, Japan
fDate :
3/31/2005 12:00:00 AM
Abstract :
GaAs TUNNET diodes fabricated with molecular layer epitaxy oscillated in metal rectangular resonant WR-2.2 cavities in fundamental mode are reported. Continuous-wave frequency was tuned in the range 290-393 GHz with bias current from 320 to 460 mA. Output power was -42 dBm at 393 GHz.
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20050267
