Title :
Measurement of radiative and nonradiative recombination rate in InGaAsP-InP LED´s
Author :
M. Kot;K. Zdansky
Author_Institution :
Inst. of Radio Eng. & Electron., Czech Acad. of Sci., Prague, Czechoslovakia
Abstract :
The curves of the minority carrier lifetime versus current are measured in InGaAsP-InP double heterostructure LEDs. To analyze the measured data the carrier recombination rate versus the minority carrier concentration n are calculated. Radiative and Auger recombination processes are considered to explain the measured data on heterointerfaces and/or on recombination centers. The radiative recombination rate R/sub rad/ versus n curves are confirmed to be parabolic. A simple analytical formula for the radiative recombination rate coefficient B(n) is derived.
Keywords :
"Light emitting diodes","Radiative recombination","Spontaneous emission","Charge carrier lifetime","Current measurement","Equations","Data analysis","Signal to noise ratio","Optical saturation","Temperature dependence"
Journal_Title :
IEEE Journal of Quantum Electronics
