DocumentCode :
3788060
Title :
Erratum
Volume :
5
Issue :
1
fYear :
2005
Firstpage :
155
Lastpage :
155
Keywords :
"Silicon germanium","Germanium silicon alloys","Thyristors","Electrostatic discharge","Protection","Circuits"
Journal_Title :
IEEE Transactions on Device and Materials Reliability
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2005.849957
Filename :
1435400
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3788060
