Title :
Session 9 overview DRAM and ferroelectric memories [breaker page]
Abstract :
Summary form only given. Start of the above-titled section of the conference proceedings record.
Keywords :
Capacitance; Capacitors; Degradation; Ferroelectric materials; Hardware; Protocols; Random access memory; Silicon; Technological innovation; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.992980
