A quasi-matrix ferroelectric memory for future silicon storage

Author

Nishihara, T. ; Ito, Y.

Author_Institution

Sony Corp., Tokyo, Japan

Volume

1

fYear

2002

fDate

7-7 Feb. 2002

Firstpage

160

Abstract

This paper describes a quasi-matrix (Q-matrix) ferroelectric memory unit for future silicon storage media which consists of multiple ferroelectric capacitors that store individual bits and share one access transistor. Disturb degradation and cross-talk effects are suppressed to an acceptable level. The capacitors can be multi-stacked, increasing packing density by a number of times.

Keywords

crosstalk; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; integrated circuit layout; integrated circuit testing; integrated memory circuits; random-access storage; Q-matrix ferroelectric memory; cross-talk effects suppression; disturb degradation effects suppression; ferroelectric capacitors; individual bit storage; memory unit; multi-stacked capacitors; packing density; quasi-matrix ferroelectric memory; shared access transistor; silicon storage media; Capacitors; Degradation; Ferroelectric films; Ferroelectric materials; Flash memory; Frequency; Nonvolatile memory; Random access memory; Silicon; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7335-9

Type

conf

DOI

10.1109/ISSCC.2002.992985

Filename

992985