Title :
0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS
Author :
Joseph, A. ; Coolbaugh, D. ; Harame, D. ; Freeman, G. ; Subbanna, S. ; Doherty, M. ; Dunn, J. ; Dickey, C. ; Greenberg, D. ; Groves, R. ; Meghelli, M. ; Rylyakov, A. ; Sorna, M. ; Schreiber, O. ; Herman, D. ; Tanji, T.
Author_Institution :
IBM Corp., Essex Junction, VT, USA
Abstract :
SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5/spl mu/m. The key component is the SiGe-base HBT whose performance (f/sub T/, f/sub MAX/) is improved to >200GHz in the 0.13/spl mu/m generation. Evolution and future directions of SiGe BiCMOS technology and product applications are reviewed.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; 0.13 micron; 210 GHz; SiGe; SiGe BiCMOS technology; SiGe HBT; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Resistors; Silicon germanium; Space technology; Time to market; Varactors;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.992995
