DocumentCode
378826
Title
0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS
Author
Joseph, A. ; Coolbaugh, D. ; Harame, D. ; Freeman, G. ; Subbanna, S. ; Doherty, M. ; Dunn, J. ; Dickey, C. ; Greenberg, D. ; Groves, R. ; Meghelli, M. ; Rylyakov, A. ; Sorna, M. ; Schreiber, O. ; Herman, D. ; Tanji, T.
Author_Institution
IBM Corp., Essex Junction, VT, USA
Volume
1
fYear
2002
fDate
7-7 Feb. 2002
Firstpage
180
Abstract
SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5/spl mu/m. The key component is the SiGe-base HBT whose performance (f/sub T/, f/sub MAX/) is improved to >200GHz in the 0.13/spl mu/m generation. Evolution and future directions of SiGe BiCMOS technology and product applications are reviewed.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; 0.13 micron; 210 GHz; SiGe; SiGe BiCMOS technology; SiGe HBT; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Resistors; Silicon germanium; Space technology; Time to market; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7335-9
Type
conf
DOI
10.1109/ISSCC.2002.992995
Filename
992995
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