• DocumentCode
    3788267
  • Title

    Correction to "Line shape in GaAs injection lasers"

  • Author

    G. Burns;M.I. Nathan

  • Author_Institution
    IBM Corp., Yorktown Heights, N. Y.
  • Volume
    51
  • Issue
    5
  • fYear
    1963
  • Firstpage
    860
  • Lastpage
    860
  • Keywords
    "Shape","Gallium arsenide","P-n junctions","Heterojunctions","Semiconductor diodes","Electromagnetic wave absorption","Temperature dependence","Optical coupling","Production","Semiconductor device doping"
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1963.2295
  • Filename
    1444225