Title :
50 Gb/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial communication systems
Author :
Meghelli, M. ; Rylyakov, A.V. ; Lei Shan
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer ICs targeting SONET OC-768 applications are packaged to enable bit-error-rate testing by connecting their serial interfaces. Operation is error-free for both circuits at data rates >50 Gb/s and -3.6 V supply.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; SONET; demultiplexing equipment; error statistics; high-speed integrated circuits; integrated circuit packaging; integrated circuit testing; multiplexing equipment; semiconductor materials; telecommunication equipment testing; time division multiplexing; -3.6 V; 0.18 micron; 50 Gbit/s; BER testing; SONET OC-768 applications; SiGe; SiGe BiCMOS technology; bit error rate testing; ceramic substrate; composite housing; high-speed V-connectors; on-wafer test; package; serial communications systems; time division demultiplexer ICs; time division multiplexer ICs; tree architecture; Bandwidth; BiCMOS integrated circuits; Circuit testing; Clocks; Germanium silicon alloys; Latches; Multiplexing; Packaging; SONET; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.993035
