DocumentCode :
3788621
Title :
Schottky contacts on n-In/sub 0.53/Ga/sub 0.47/As with enhanced barriers by counter-doped interfacial layers
Author :
P. Kordos;M. Marso;R. Meyer;H. Luth
Author_Institution :
Inst. fuer Schicht- und Ionentechnik, Forschungszentrum Julich, Germany
Volume :
39
Issue :
8
fYear :
1992
Firstpage :
1970
Lastpage :
1972
Abstract :
The authors report the preparation and properties of Schottky contacts on n-InGaAs structures. The barrier height is enhanced by counter-doped p/sup +/-InGaAs layers (zinc-doped, N/sub A/=8*10/sup 18/ cm/sup -3/, d=30 and 60 nm), situated between an n-InGaAs active layer and a barrier metal. Schottky diodes exhibit low reverse current densities, J/sub R/=5*10/sup -6/ A/cm/sup 2/, the ideality factor is near unity, n=1.12, and effective barrier heights are 0.66-0.68 eV.
Keywords :
"Schottky barriers","Schottky diodes","Electron devices","Current density","Photonic band gap","Insulation","Indium gallium arsenide","Semiconductor diodes","Indium phosphide","Zinc"
Journal_Title :
IEEE Transactions on Electron Devices
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.144693
Filename :
144693
Link To Document :
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