• DocumentCode
    3788621
  • Title

    Schottky contacts on n-In/sub 0.53/Ga/sub 0.47/As with enhanced barriers by counter-doped interfacial layers

  • Author

    P. Kordos;M. Marso;R. Meyer;H. Luth

  • Author_Institution
    Inst. fuer Schicht- und Ionentechnik, Forschungszentrum Julich, Germany
  • Volume
    39
  • Issue
    8
  • fYear
    1992
  • Firstpage
    1970
  • Lastpage
    1972
  • Abstract
    The authors report the preparation and properties of Schottky contacts on n-InGaAs structures. The barrier height is enhanced by counter-doped p/sup +/-InGaAs layers (zinc-doped, N/sub A/=8*10/sup 18/ cm/sup -3/, d=30 and 60 nm), situated between an n-InGaAs active layer and a barrier metal. Schottky diodes exhibit low reverse current densities, J/sub R/=5*10/sup -6/ A/cm/sup 2/, the ideality factor is near unity, n=1.12, and effective barrier heights are 0.66-0.68 eV.
  • Keywords
    "Schottky barriers","Schottky diodes","Electron devices","Current density","Photonic band gap","Insulation","Indium gallium arsenide","Semiconductor diodes","Indium phosphide","Zinc"
  • Journal_Title
    IEEE Transactions on Electron Devices
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.144693
  • Filename
    144693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3788621