DocumentCode :
3788649
Title :
Comments on "Two-port networks with independent sources"
Author :
G.H. Danielson;M.F. Moad
Author_Institution :
General Electric Co., Syracuse, N. Y.
Volume :
55
Issue :
1
fYear :
1967
Firstpage :
95
Lastpage :
95
Keywords :
"Semiconductor device noise","Noise generators","Frequency","Autocorrelation","Dielectric losses","Circuit noise","Passband","Dielectric materials","Semiconductor materials","Gallium arsenide"
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5394
Filename :
1447324
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3788649
