مرکز منطقه ای اطلاع رساني علوم و فناوري - Comments on "Gate leakage currents in MOS field-effect transistors"

DocumentCode :

3788675

Title :

Comments on "Gate leakage currents in MOS field-effect transistors"

Author :

V.C. Negro;E.J. Kennedy

Author_Institution :

U.S. Atomic Energy Commission, New York, N.Y.

Volume :

Issue :

fYear :

1967

Firstpage :

1540

Lastpage :

1541

Keywords :

"Leakage current","FETs","MOSFET circuits","Packaging","Displays","Diodes","Drives","Frequency","Testing","Impedance"

Journal_Title :

Proceedings of the IEEE

Publisher :

ieee

ISSN :

0018-9219

Type :

jour

DOI :

10.1109/PROC.1967.5900

Filename :

1447830

Link To Document :