مرکز منطقه ای اطلاع رساني علوم و فناوري - Comments on "On the validity of the gradual-channel approximation for field-effect transistors"

DocumentCode :

3788798

Title :

Comments on "On the validity of the gradual-channel approximation for field-effect transistors"

Author :

K. Lehovec; Choong-Ki Kim;E.S. Yang

Author_Institution :

Inventors and Investors, Inc., Williamstown, Mass.

Volume :

Issue :

fYear :

1971

Firstpage :

431

Lastpage :

432

Keywords :

"FETs","Space charge","Boundary conditions","Poisson equations","Impurities","Space stations","Electron mobility"

Journal_Title :

Proceedings of the IEEE

Publisher :

ieee

ISSN :

0018-9219

Type :

jour

DOI :

10.1109/PROC.1971.8198

Filename :

1450128

Link To Document :