• DocumentCode
    3788798
  • Title

    Comments on "On the validity of the gradual-channel approximation for field-effect transistors"

  • Author

    K. Lehovec; Choong-Ki Kim;E.S. Yang

  • Author_Institution
    Inventors and Investors, Inc., Williamstown, Mass.
  • Volume
    59
  • Issue
    3
  • fYear
    1971
  • Firstpage
    431
  • Lastpage
    432
  • Keywords
    "FETs","Space charge","Boundary conditions","Poisson equations","Impurities","Space stations","Electron mobility"
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8198
  • Filename
    1450128
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3788798