A mathematical approximation of junction FET characteristics
Author :
J. Dostal
Author_Institution :
Research Institute for Mathematical Machines, Prague, Czechoslovakia
Volume :
62
Issue :
6
fYear :
1974
Firstpage :
855
Lastpage :
856
Abstract :
The familiar quadratic form [1] of junction FET characteristics will be shown to be a result of Taylor series approximation of the Shockley [2] mathematical model.
Keywords :
"FETs","Silicon carbide","Research and development","Displays","Light emitting diodes","Voltage","Diode lasers","Contacts","Electroluminescent devices","Crystals"
