DocumentCode :
3789746
Title :
Correction to "Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs"
Author :
T.J. Drummond
Author_Institution :
Sandia National Laboratories, Albuquerque, NM, USA
Volume :
74
Issue :
12
fYear :
1986
Firstpage :
1803
Lastpage :
1803
Keywords :
"Epitaxial layers","Gallium arsenide","Heterojunctions","FETs","MODFETs","HEMTs","Electrical capacitance tomography"
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1986.13695
Filename :
1457963
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3789746
