DocumentCode :
3789999
Title :
Further comments on "Complementary MOS-bipolar transistor structure"
Author :
H.C. Lin
Author_Institution :
Westinghouse Electric Corp. Baltimore, Md.
Volume :
17
Issue :
8
fYear :
1970
Firstpage :
637
Lastpage :
637
Journal_Title :
IEEE Transactions on Electron Devices
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17045
Filename :
1476229
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3789999
