مرکز منطقه ای اطلاع رساني علوم و فناوري - Correction to "Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperatures"

DocumentCode :

3790051

Title :

Correction to "Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperatures"

Author :

G. Ottaviani

Author_Institution :

Istituto di Fisica dell´ Università

Volume :

Issue :

fYear :

1976

Firstpage :

1113

Lastpage :

1113

Journal_Title :

IEEE Transactions on Electron Devices

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1976.18555

Filename :

1478568

Link To Document :