DocumentCode :
3790097
Title :
Comments on "Depletion approximation analysis of the differential capacitance-voltage characteristics of an MOS structure with nonuniformly doped semiconductors"
Author :
R.R. O´Brien
Author_Institution :
IBM Corporation, Hopewell Junction, NY
Volume :
27
Issue :
9
fYear :
1980
Firstpage :
1848
Lastpage :
1849
Journal_Title :
IEEE Transactions on Electron Devices
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20117
Filename :
1480910
Link To Document :
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