A low-power and high-speed submicron buried-channel MOSFET fabricated on the buried oxide

Submicrometer buried-channel MOSFET´s isolated by a buried oxide layer formed by oxygen ion-implantation technology were fabricated and their switching performances were evaluated. An n-channel E/D MOS ring oscillator with 0.5-µm channel devices has achieved a minimum delay time of 139 ps at 3.5-v drain voltage at room temperature and 78.4 ps at 7-V drain voltage at 77 K.