DocumentCode :
3790138
Title :
Comment on "Single-carrier space-charge controlled conduction vs. ballistic transport in GaAs devices at 77°K"
Author :
J.B. Socha;L.F. Eastman
Author_Institution :
Cornell University, Ithaca, NY
Volume :
3
Issue :
1
fYear :
1982
Firstpage :
27
Lastpage :
27
Keywords :
"Ballistic transport","Gallium arsenide","Voltage","Electrons","Temperature","Current density","Maxwell equations","Nitrogen","Boundary conditions","Reflection"
Journal_Title :
IEEE Electron Device Letters
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25462
Filename :
1482567
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3790138
