DocumentCode :
3790159
Title :
An integrated silicon magnetic field sensor using the magnetodiode principle
Author :
R.S. Popovic;H.P. Baltes;F. Rudolf
Author_Institution :
LGZ Landis and Gyr Zug AG, Zug, Switzerland
Volume :
31
Issue :
3
fYear :
1984
Firstpage :
286
Lastpage :
291
Abstract :
We report a novel integrated magnetic field sensitive device. Its structure is reminiscent of the bipolar transistor, but its operation is essentially that of a magnetodiode: a reverse-biased p-n (collector) junction plays a role similar to that of the high recombining surface of classical magnetodiodes. The device can be manufactured in standard bulk CMOS or bipolar technology. Sensitivity up to 25 V/T at 10-mA current is achieved. Voltage-current characteristics shows saturation and negative resistance regions, which are explained by JFET and UJT effects, respectively.
Journal_Title :
IEEE Transactions on Electron Devices
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21516
Filename :
1483801
Link To Document :
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