• DocumentCode
    3790166
  • Title

    Reply to "Comments on new progress in the development of a 94-GHz pretuned module silicon IMPATT diode"

  • Author

    M. Heitzmann

  • Author_Institution
    Thomson-CSF, Montreuil Sous Bois, France
  • Volume
    31
  • Issue
    10
  • fYear
    1984
  • Firstpage
    1512
  • Lastpage
    1512
  • Journal_Title
    IEEE Transactions on Electron Devices
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21743
  • Filename
    1484028