Current balancing in TIL GTO thyristors

Based on the advanced three-transistor model of the two interdigitation levels (TIL) GTO thyristor structure, the theory underlying the device behavior in the ON-state is developed and experimentally validated. The mechanisms underlying the current balancing between the two p-n-p-n sections (standard and quasi-nonregenerative) constituting the TIL GTO structure are disclosed. It is shown that thanks to the current balancing, the effective cathode emitter area increases with the anode current level and that the current density along the standard p-n-p-n sections lags behind the level of load current iT. The broad implications of reported theoretical/experimental results for the physics of the novel device are outlined in the communication. It is shown, e.g., that current balancing is responsible for the drastic boost of the peak interruptable anode current IATOreported for the recently developed TIL GTO thyristors.