Abstract :
A novel device, sensitive to the magnetic field parallel to the chip surface is described. The device has a form remeniscent of a semi circular plate placed perpendicularly to the chip plane. The operation principle is that of the conventional Hall-effect device. The unusual geometry principally does not affect sensitivity. The experimental samples are fabricated using a standard bulk CMOS technology, where the p-well deep diffusion is used to surround the active device volume. Sensitivity up to 450 V/AT is measured.
Keywords :
"Hall effect devices","Geometry","Magnetic fields","CMOS technology","Magnetic field measurement","Insulation","Current density","Semiconductor device measurement","Temperature sensors"
