مرکز منطقه ای اطلاع رساني علوم و فناوري - Comment on "A theory of enhanced impact ionization due to the gate field and mobility degradation in the inversion layer of MOSFET´s"

DocumentCode :

3790224

Title :

Comment on "A theory of enhanced impact ionization due to the gate field and mobility degradation in the inversion layer of MOSFET´s"

Author :

A. Rothwarf

Author_Institution :

Drexel University, Philadelphia, PA

Volume :

Issue :

fYear :

1986

Firstpage :

457

Lastpage :

457

Keywords :

"Impact ionization","Degradation","Energy states","Effective mass","Electron mobility","Kinetic energy","Charge carrier density","Resistance heating","Silicon","Quantum mechanics"

Journal_Title :

IEEE Electron Device Letters

Publisher :

ieee

ISSN :

0741-3106

Type :

jour

DOI :

10.1109/EDL.1986.26435

Filename :

1486258

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3790224