• DocumentCode
    3790224
  • Title

    Comment on "A theory of enhanced impact ionization due to the gate field and mobility degradation in the inversion layer of MOSFET´s"

  • Author

    A. Rothwarf

  • Author_Institution
    Drexel University, Philadelphia, PA
  • Volume
    7
  • Issue
    7
  • fYear
    1986
  • Firstpage
    457
  • Lastpage
    457
  • Keywords
    "Impact ionization","Degradation","Energy states","Effective mass","Electron mobility","Kinetic energy","Charge carrier density","Resistance heating","Silicon","Quantum mechanics"
  • Journal_Title
    IEEE Electron Device Letters
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26435
  • Filename
    1486258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3790224