DocumentCode

3790384

Title

Corrections to "Fabrication of High-Quality p-MOSFET in Ge Grown Heteroepitaxially on Si"

Author

Y. Taur

Volume

26

Issue

9

fYear

2005

Firstpage

696

Lastpage

696

Keywords

"MOSFET circuits","Silicon","Equations","Electron devices"

Journal_Title

IEEE Electron Device Letters

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.854961

Filename

1499003