Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature

A passive detection scheme for broadband, 10 GHz-2.52 THz, sensing at room temperature is demonstrated using a hemispherical silicon lens-coupled diode of an asymmetrically-shaped bow-tie geometrical form. The device is fabricated from an MBE-grown In/sub 0.54/Ga/sub 0.46/As wafer as mesas of 3 /spl mu/m depth produced by wet etching. The detector exhibits voltage sensitivity about 5 V/W below 1 THz.