DocumentCode
3795449
Title
Corrections to “Device Linearity Comparison of Uniformly Doped and$delta$ -Doped$hboxIn_0.52hboxAl_0.48hboxAs/hboxIn_0.6hboxGa_0.4hboxAs$ Metamorphic HEMTs”
Author
Y.C. Lin;E.Y. Chang;H. Yamaguchi;Y. Hirayama;X.Y. Chang;C.Y. Chang
Volume
27
Issue
10
fYear
2006
Firstpage
866
Lastpage
866
Keywords
"Linearity","mHEMTs","Electron devices","Councils","Materials science and technology","Microelectronics","Information systems","Laboratories"
Journal_Title
IEEE Electron Device Letters
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.884081
Filename
1704925
Link To Document