DocumentCode :
3795456
Title :
Transient response times of a-Si : H p-i-n color detector
Author :
V. Gradisnik;M. Pavlovic;B. Pivac;I. Zulim
Author_Institution :
Fac. of Eng., Univ. of Rijeka, Croatia
Volume :
53
Issue :
10
fYear :
2006
Firstpage :
2485
Lastpage :
2491
Abstract :
Transients and relevant response times of a-Si : H p-i-n photodetector under various illuminations (in the visible range) and bias voltage conditions were studied. The model/method for possible color detection using on and off transient response times is proposed. Depending on illumination and bias pulse types, one or two processes are found to be involved in the conduction mechanism, including transition and trapping of both charge carrier types. Characteristic photocurrent transients and response times under modulated monochromatic and chromatic visible light illumination enable color recognition. The peculiar behavior of the blue light transients has been also plausibly explained by means of the proposed model
Keywords :
"p-i-n photodiodes","Photodetectors","Transient analysis","Amorphous semiconductors","Charge carrier lifetime","Semiconductor device modeling","Silicon"
Journal_Title :
IEEE Transactions on Electron Devices
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.882265
Filename :
1705099
Link To Document :
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