• DocumentCode
    3795725
  • Title

    On the measurement of surface state density and diffusion component from bulk in MOS capacitors with long relaxation time

  • Author

    A. Siennicki;A. Zaleski

  • Author_Institution
    Inst. of Microelectron. & Optoelectron., Tech. Univ. of Warsaw, Poland
  • Volume
    36
  • Issue
    2
  • fYear
    1989
  • Firstpage
    457
  • Lastpage
    458
  • Abstract
    The fast method used for the measurement of the generation lifetime by W.W. Keller (ibid. vol.ED-34, p.1141-6, May 1987) is examined by a simulation program. The lack of correlation between the surface generation velocity and the surface state density is observed and discussed. In the analysis, in addition to the surface-state generation and space-charge-region generation considered by Keller, bulk generation is considered.
  • Keywords
    "Density measurement","MOS capacitors","Time measurement","Interface states","Voltage","Electrodes","Microelectronics","Capacitance","State estimation"
  • Journal_Title
    IEEE Transactions on Electron Devices
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.19952
  • Filename
    19952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3795725