• DocumentCode
    3795801
  • Title

    Lateral profiling of oxide charge and interface traps near MOSFET junctions

  • Author

    W. Chen;A. Balasinski;T.-P. Ma

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • Volume
    40
  • Issue
    1
  • fYear
    1993
  • Firstpage
    187
  • Lastpage
    196
  • Abstract
    A technique for measuring the lateral distributions of both interface traps and trapped oxide charge near the source/drain junctions in MOSFETs is presented in detail. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Some illustrative results are given. The various issues involved in its implementation and its practical limitations are discussed.
  • Keywords
    "MOSFET circuits","Charge pumps","Current measurement","Charge measurement","Threshold voltage","Pulse measurements","Microelectronics","Senior members","Tail","Data analysis"
  • Journal_Title
    IEEE Transactions on Electron Devices
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.249443
  • Filename
    249443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3795801