High temperature silicon carbide MOSFETs with very low drain leakage current

Inversion mode n-channel MOSFETs have been built on (6H) silicon carbide (SiC) substrates, with thermal oxide as the gate insulator, and with channel lengths ranging from 1 to 25 mu m. Drain leakage currents lower than 0.04 pA/ mu m channel width have been experimentally obtained at temperatures up to 400 degrees C and V/sub d/=5 V.