High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectors

Author

I-Hsing Tan;J.J. Dudley;D.I. Babic;D.A. Cohen;B.D. Young;E.L. Hu;J.E. Bowers;B.I. Miller;U. Koren;M.G. Young

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

6

Issue

7

fYear

1994

Firstpage

811

Lastpage

813

Abstract

We demonstrate greater than 90% quantum efficiency in an In/sub 0.53/Ga/sub 0.47/As photodetector with a thin (900 /spl Aring/) absorbing layer. This was achieved by inserting the In/sub 0.53/Ga/sub 0.47/As/InP epitaxial layer into a microcavity composed of a GaAs/AlAs quarter-wavelength stack (QWS) and a Si/SiO/sub 2/ dielectric mirror. The 900-/spl Aring/-thick In/sub 0.53/Ga/sub 0.47/As layer was wafer fused to a GaAs/AlAs mirror, having nearly 100% power reflectivity. A Si/SiO/sub 2/ dielectric mirror was subsequently deposited onto the wafer-fused photodiode to form an asymmetric Fabry-Perot cavity. The external quantum efficiency and absorption bandwidth for the wafer-fused RCE photodiodes were measured to be 94/spl plusmn/3% and 14 nm, respectively. To our knowledge, these wafer-fused RCE photodetectors have the highest external quantum efficiency and narrowest absorption bandwidth ever reported on the long-wavelength resonant-cavity-enhanced photodetectors.

Keywords

"Absorption","Bandwidth","Photodetectors","Mirrors","Gallium arsenide","Dielectrics","Photodiodes","Indium phosphide","Epitaxial layers","Microcavities"

Journal_Title

IEEE Photonics Technology Letters

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.311462

Filename

311462