• DocumentCode
    3796071
  • Title

    Effect of radiation-induced oxide-trapped charge on mobility in p-channel MOSFETs

  • Author

    N. Stojadinovic;M. Pejovic;S. Golubovic;G. Ristic;V. Davidovic;S. Dimitrijev

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ., Serbia
  • Volume
    31
  • Issue
    6
  • fYear
    1995
  • fDate
    3/16/1995 12:00:00 AM
  • Firstpage
    497
  • Lastpage
    498
  • Abstract
    It is shown that radiation-induced oxide-trapped charge contributes to an increase in mobility in p-channel MOSFETs. A new scattering mechanism involving retardation of surface-roughness scattering due to oxide-trapped charge is proposed in order to explain the observed mobility increase.
  • Keywords
    "Charge carrier mobility","MOSFETs","Radiation effects"
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950302
  • Filename
    375861
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3796071