DocumentCode :
379667
Title :
An accurate method for extracting the critical field in short channel NMOS devices
Author :
Amhouche, Y. ; El Abbassi, A. ; Rais, K. ; Rmaily, R.
Author_Institution :
Lab. de Caracterisation des Composants a Semi-conducteurs, Univ. Chouaib Doukkali, El Jadida, Morocco
fYear :
2001
fDate :
29-31 Oct. 2001
Firstpage :
65
Lastpage :
66
Abstract :
In this paper, an accurate method for extracting the critical field Ec in short channel MOSFET´s is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltage Vdsat(Vg) continuously. The results obtained by this technique have shown better agreement with measurement data and have allow at the same time to determine the validity domain of Sodini´s law.
Keywords :
MOSFET; electric fields; semiconductor device models; Sodini´s law; critical field extraction; drain saturation voltage; gate voltage; models; n-MOSFET; n-channel MOSFETs; short channel NMOS devices; Analytical models; Data mining; Equations; Impact ionization; Linearity; MOS devices; MOSFETs; Testing; Threshold voltage; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
Type :
conf
DOI :
10.1109/ICM.2001.997488
Filename :
997488
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=379667
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