Title :
Prospects and expectations of power electronics in the 21st century
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol.
Abstract :
The emergence of power semiconductor devices such as insulated-gate bipolar transistors (IGBTs) or injection-enhanced gate transistors (IEGTs) and gate-commutated turn-off (GCT) thyristors or integrated gate-commutated thyristors (IGCTs) enables power conversion systems to expand into utility and industry applications. This paper describes the present status of power electronics, and its future prospects and directions in the 21st century
Keywords :
AC motor drives; MOS-controlled thyristors; insulated gate bipolar transistors; power bipolar transistors; power conversion; AC motor drives; GCT; IGBT; IGCT; gate commutated turn-off thyristors; injection-enhanced gate transistors; insulated-gate bipolar transistors; integrated gate commutated thyristors; motor drives; power conversion; power conversion systems; power electronics; power semiconductor devices; silicon-carbide devices; super-junction devices;
Conference_Titel :
Power Conversion Conference, 2002. PCC-Osaka 2002. Proceedings of the
Conference_Location :
Osaka
Print_ISBN :
0-7803-7156-9
DOI :
10.1109/PCC.2002.997645
