Optimisation of local lifetime control in high power diode

This paper discusses the effectiveness of the lifetime control technology in high-voltage diodes. A comprehensive study of the static and dynamic performance of diodes using lifetime control technology in comparison with diodes using other techniques is made. We show for the first time that the optimum reduced lifetime region is not always at the anode p-n junction. The optimisation of the location depends on the current decreasing rate di/dt and other device parameters such as the lifetime in the whole n-drift region. We also show that the double irradiation is the most effective method among all the techniques and the optimisation of the second implantation energy is the key to achieve a reduced reverse current peak and a soft recovery