• DocumentCode
    3799648
  • Title

    Numerical simulation and comparison of Si BJTs and Si/sub 1-x/Ge/sub x/ HBTs

  • Author

    B. Pejcinovic;L.E. Kay;T.-W. Tang;D.H. Navon

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
  • Volume
    36
  • Issue
    10
  • fYear
    1989
  • Firstpage
    2129
  • Lastpage
    2137
  • Abstract
    Using the Monte Carlo method for the solution of the Boltzmann transport equation, the authors analyze the low-field carrier mobilities of strained layer and bulk Si and Si/sub 1-x/Ge/sub x/ alloys. Strained alloy layers exhibit higher low-field mobility compared with bulk Si at doping levels >10/sup 18/ cm/sup -3/ and for a Ge mole fraction x
  • Keywords
    "Numerical simulation","Heterojunction bipolar transistors","Silicon alloys","Poisson equations","Germanium alloys","Current density","Conducting materials","Doping","Voltage","Frequency"
  • Journal_Title
    IEEE Transactions on Electron Devices
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.40892
  • Filename
    40892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3799648