Highly integrated Si/SiGe RFIC´s for 3G wideband-CDMA mobile radio terminals

Author

Weigel, R. ; Maurer, L. ; Springer, A. ; Fenk, J. ; Hagelauer, R. ; Pretl, H. ; Schelmbauer, W. ; Thomann, W.

Author_Institution

Inst. for Commun. & Inf. Eng., Linz Univ., Austria

Volume

1

fYear

2002

fDate

2002

Firstpage

3

Abstract

This paper describes the RF-related system and radio frequency integrated circuit (RFIC) issues of 3G wideband-CDMA (W-CDMA) systems like UMTS, technologies that will play a major role in the future of wireless telecommunications, allowing for networks which will add broadband data to support video, Internet access, and other high speed data services for untethered devices. Examples of highly integrated RFIC successfully designed for W-CDMA mobile terminal applications in Japan and Europe are presented.

Keywords

3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; mobile handsets; radiofrequency integrated circuits; 3G wideband CDMA; Europe; Japan; RFIC; Si-SiGe; Si/SiGe; UMTS; W-CDMA; mobile radio terminals; radio frequency integrated circuit; 3G mobile communication; Europe; Germanium silicon alloys; IP networks; Integrated circuit technology; Land mobile radio; Multiaccess communication; Radiofrequency integrated circuits; Silicon germanium; Web and internet services;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Wireless Communications, 2002. MIKON-2002. 14th International Conference on

Print_ISBN

83-906662-5-1

Type

conf

DOI

10.1109/MIKON.2002.1017796

Filename

1017796