Title :
The thermal effects in LDMOS transistor
Author :
Michnowski, Ryszard ; Wojtasiak, Wojciech
Author_Institution :
Inst. of Radioelectron., Warsaw Univ. of Technol., Poland
Abstract :
This paper describes development of thermal LDMOS model based on the solution of heat conducting equation (HCE) by means of 3D FDTD thermal method. This thermal analysis co-operates with electrical LDMOS model implemented in Agilent´s program (ADS). The elaborated temperature-dependent microwave LDMOS model will be used to design high power amplifiers for transmitters of radar (APAR) and radiocommunication systems.
Keywords :
UHF field effect transistors; finite difference time-domain analysis; power MOSFET; semiconductor device models; temperature distribution; thermal analysis; 3D FDTD method; ADS; LDMOS transistor; heat conducting equation; high power amplifiers; radar transmitters; radiocommunication transmitters; temperature-dependent microwave model; thermal LDMOS model; thermal analysis; thermal effects; Electromagnetic heating; Equations; Finite difference methods; High power amplifiers; Microwave transistors; Power system modeling; Radar; Radio transmitters; Thermal conductivity; Time domain analysis;
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2002. MIKON-2002. 14th International Conference on
Print_ISBN :
83-906662-5-1
DOI :
10.1109/MIKON.2002.1017812
