The thermal effects in LDMOS transistor

Author

Michnowski, Ryszard ; Wojtasiak, Wojciech

Author_Institution

Inst. of Radioelectron., Warsaw Univ. of Technol., Poland

Volume

1

fYear

2002

fDate

2002

Firstpage

89

Abstract

This paper describes development of thermal LDMOS model based on the solution of heat conducting equation (HCE) by means of 3D FDTD thermal method. This thermal analysis co-operates with electrical LDMOS model implemented in Agilent´s program (ADS). The elaborated temperature-dependent microwave LDMOS model will be used to design high power amplifiers for transmitters of radar (APAR) and radiocommunication systems.

Keywords

UHF field effect transistors; finite difference time-domain analysis; power MOSFET; semiconductor device models; temperature distribution; thermal analysis; 3D FDTD method; ADS; LDMOS transistor; heat conducting equation; high power amplifiers; radar transmitters; radiocommunication transmitters; temperature-dependent microwave model; thermal LDMOS model; thermal analysis; thermal effects; Electromagnetic heating; Equations; Finite difference methods; High power amplifiers; Microwave transistors; Power system modeling; Radar; Radio transmitters; Thermal conductivity; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Wireless Communications, 2002. MIKON-2002. 14th International Conference on

Print_ISBN

83-906662-5-1

Type

conf

DOI

10.1109/MIKON.2002.1017812

Filename

1017812