DocumentCode
380242
Title
High-power FETs application in S-band amplifier
Author
Zajdel, Andrzej
Author_Institution
Wroclaw Div., Telecommun. Res. Inst., Wroclaw, Poland
Volume
2
fYear
2002
fDate
2002
Firstpage
520
Abstract
A 15 Watt pulsed amplifier design in S-band using Fujitsu GaAs FETs is presented. The essential elements, namely, FET characterization for power and efficiency, stability and forward gate current protection are described. The paper concludes with some experimental results of the realized amplifier which has a frequency range of 3.0-3.5 GHz and an insertion gain of 30 dB minimum.
Keywords
circuit CAD; circuit stability; microwave power amplifiers; power field effect transistors; pulse amplifiers; 15 W; 3 to 3.5 GHz; 30 dB; CAD; FET power/efficiency characterization; FET stability; GaAs; S-band pulsed amplifier design; forward gate current protection; high-power GaAs FET; microwave power amplifiers; Circuit stability; FETs; Gallium arsenide; High power amplifiers; Impedance matching; Power amplifiers; Protection; Pulse amplifiers; Resistors; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Radar and Wireless Communications, 2002. MIKON-2002. 14th International Conference on
Print_ISBN
83-906662-5-1
Type
conf
DOI
10.1109/MIKON.2002.1017900
Filename
1017900
Link To Document