Author_Institution :
Technische Universit?t M?nchen, Lehrstuhl f?r Allgemeine Elektrotechnik und Angewandte Elektronik, M?nchen, West Germany
Abstract :
Single-drift flat-profile GaAs IMPATT diodes with diamond heat sinks have been fabricated in the 50 GHz band. The design of the diodes is based on a lower value of effective saturated drift velocity of electrons at high electric fields. Output power as high as 0.7 W at 53 GHz and an efficiency of 12.3% at 51 GHz have been obtained.
