Author_Institution :
Technische Universit?t M?nchen, Lehrstuhl f?r Allgemeine Elektrotechnik und Angewandte Elektronik, M?nchen, West Germany
Abstract :
IMPATT diodes with technologically integrated beam-leads were fabricated. Since no diode bonding is required, a total diode thickness of less than 2 ?m can be realised reproducibly. With optimum device packages, peak pulse output powers of more than 10 W at 70 GHz have been achieved from silicon single-drift IMPATT diodes.
