Abstract :
A primary goal in semiconductor spintronics is to develop a new generation of functional devices that exploit not only an electron´s charge (as in today´s electronics industry) but also its spin. The authors show how a system of coupled spin drift-diffusion equations can accurately model spin-polarized electron transport in semiconductors. Numerical solutions allow for direct and quantitative comparison with experimental imaging data.
Keywords :
"Electrons","Magnetoelectronics","Optical polarization","Magnetic field induced strain","Strain control","Gallium arsenide","Magnetic semiconductors","Differential equations","Extraterrestrial measurements","Electronics industry"
