DocumentCode :
38072
Title :
Temperature-Dependent Analytical Model for Microwave and Noise Performance Characterization of \\hbox {In}_{0.52}\\hbox {Al}_{0.48}\\hbox {As/In}_{m} \\hbox {Ga}_{1-m}\\hbox {As}
Author :
Bhattacharya, Mahua ; Jogi, Jyotika ; Gupta, R.S. ; Gupta, Madhu
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Volume :
13
Issue :
1
fYear :
2013
fDate :
Mar-13
Firstpage :
293
Lastpage :
300
Abstract :
This paper presents a comprehensive charge-control-based temperature dependent analytical model for symmetric tied-gate In0.52Al0.48As/InmGa1-mAs (0.53 ≤ m ≤ 0.8) DG-HEMT. The ambient temperature T in the analysis is varied from -50°C to 200°C in order to predict the device reliability for low-noise microwave frequency applications over a broad temperature range. The increase in temperature T is found to cause degradation in the microwave and noise performance of the device in terms of lower maximum frequency of oscillation (fmax), lower unilateral power gain (Gu), and higher minimum noise figure (NFmin). Although increased channel indium composition m leads to improved microwave performance, it is also observed to cause degradation in the noise performance of the device. The effect of channel indium composition on the temperature sensitivity of various microwave and noise performance parameters is also investigated. The results obtained thereof using the proposed analytical model are validated with the ATLAS device simulation results.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; semiconductor device noise; semiconductor device reliability; ATLAS device simulation; DG-HEMT; In0.52Al0.48As-InmGa1-mAs; channel indium composition; comprehensive charge-control; device reliability; low-noise microwave frequency applications; noise performance characterization; temperature sensitivity; temperature-dependent analytical model; Indium; Logic gates; Microwave devices; Microwave oscillators; Noise; Performance evaluation; Temperature dependence; Double-gate; InAlAs/InGaAs; high-electron mobility transistor (HEMT); indium mole fraction; minimum noise figure; temperature dependence; unilateral power gain;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2013.2243913
Filename :
6425449
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